Theoretical analysis of the resistively coupled single-electron transistor

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Theoretical analysis of the resistively - coupled single - electron transistor

The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures T as small as 10e/C (where C is the junction capacitance) while the voltage gain becomes impossible at T ∼ 10 e/C. Typeset using REVTEX

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 1998

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.121557